LI Qiang,LEI Cheng *,LIANG Ting,et al.Study on Plating Thick Nickel on Silicon Carbide Surface[J].Plating & Finishing,2022,(2):51-55.[doi:10.3969/j.issn.1001-3849.2022.02.011]
碳化硅表面电镀厚镍工艺研究
- Title:
- Study on Plating Thick Nickel on Silicon Carbide Surface
- 分类号:
- TQ153.2
- 文献标志码:
- A
- 摘要:
-
为了探索碳化硅深刻蚀过程中厚镍掩膜工艺条件，依据电镀原理，设计了以镀液 pH 、电流密度、镀液温度为影响因素的正交试验，通过对电镀速率和镀层均匀性双指标进行综合平衡法分析，研究各因素不同水平对实验结果的影响。采用台阶仪和激光共聚焦显微镜对电镀速率、镀层均匀性以及表面形貌进行表征。结果表明：电流密度是影响电镀速率的关键因素，镀液 pH 主要影响镀层的均匀性，最佳电镀条件为 pH 在 3.0~3.5 之间，电流密度为 20 mA·cm-2 ，温度为 55 ℃ 。该工艺成本低、镀速高且均匀性良好，可以用于制备碳化硅深刻蚀掩膜，为碳化硅基压力传感器的加工提供了关键工艺支持。
- Abstract:
-
In order to explore the process conditions of thick nickel mask during deep etching of silicon carbide ， according to the principle of electroplating ， an orthogonal experiment was designed with plating solution pH ， current density and bath temperature as the influencing factors. The influence of different levels of each factor on the experimental results was studied by comprehensive balance analysis of the two indexes of plating rate and plating uniformity. Step meter and confocal laser microscope were used to characterize the electroplating rate ， coating uniformity and surface morphology. The results showed that the current density was the key factor affecting the electroplating rate ， and the pH of the bath mainly affected the uniformity of the coating. The optimal electroplating conditions were pH of 3.0-3.5 ， current density of 20 mA · cm-2 and temperature of 55 ℃. This process had the advantages of low cost ， high plating speed and good uniformity ， and could be used to prepare deep etched silicon carbide mask ， which provided a key process support for the processing of silicon carbide-based pressure sensor.
参考文献/References:
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备注/Memo
收稿日期： 2021-07-04 修回日期： 2021-08-11 作者简介： 李强（ 1995 —），男，硕士研究生， email ： snjk08@163.com 通信作者： 雷程（ 1987 —），男，博士，副教授， email ： liangtingnuc@163.com 基金项目： 山西省重点研发计划项目（ 201903D121123 ）；中央引导地方科技发展资金（ YDZX20201400001664 ）；山西省自然科学基金项目（ 201801D221203 ）