[1]张鹏华,黄元盛,温立哲.doi: 10.3969/j.issn.1001-3849.2025.08.005酸性镀铜层晶体生长机理研究[J].电镀与精饰,2025,(08):29-33.
　Zhang Penghua,Huang Yuansheng*,Wen Lizhe.Study on crystal growth mechanism of acid copper plating[J].Plating & Finishing,2025,(08):29-33.
点击复制

doi: 10.3969/j.issn.1001-3849.2025.08.005酸性镀铜层晶体生长机理研究()

《电镀与精饰》[ISSN:1001-3849/CN:12-1096/TG]

卷:
期数:
2025年08
页码:
29-33
栏目:
出版日期:
2025-08-31

文章信息/Info

Title:
Study on crystal growth mechanism of acid copper plating
作者:
张鹏华1; 黄元盛2; 温立哲2
(1. 鹤山市精工制版有限公司,广东 鹤山 529700 ;2. 江门职业技术学院 材料与食品学院,广东 江门 529090)
Author(s):
Zhang Penghua1;  Huang Yuansheng2*;  Wen Lizhe2
(1. Heshan Jinggong Plate Making Co., Ltd., Heshan 529700, China; 2. School of Materials and Food, Jiangmen Polytechnic, Jiangmen 529090, China)
关键词:
电镀铜; 台阶生长机制; 晶粒; 晶界; 二次形核
Keywords:
copper plating;  step growth mechanism;  grain;  grain boundary;  second nucleating
分类号:
TQ153.1+4
文献标志码:
A
摘要:
为了研究电镀铜层晶体生长机制和工艺参数对晶粒形态的影响，配制了由硫酸铜、硫酸组成的电镀液，在赫尔槽中进行了镀层的制备，并采用扫描电子显微镜、超景深显微镜对镀层进行了分析。研究结果表明，镀层晶粒生长是通过晶面台阶生长机制和晶界形成的二次晶核再生长机制进行，新台阶自八面体晶粒向上凸出的顶角位置形成，并以此为中心沿着向下倾斜的(111)晶面生长；新台阶开始形成时的生长速度最大，向下生长速度逐渐变慢，在下凹晶界处生长速度达到最小值，最大与最小生长速度相差越大，晶界下凹深度越大。此外，基底表面的粗糙化可促进镀层晶粒的粗大化；当电流密度较小，阴极极化作用小时，形核率低，所得晶粒尺寸较大。本文所获得的生长机理的相关研究结果可以为采用酸性镀铜工艺制备不同要求的铜镀层提供理论指导。
Abstract:
In order to investigate the crystal growth mechanism of electroplated copper layer and the influence of process parameters on grain morphology, an electroplating solution composed of copper sulfate and sulfuric acid was prepared. The coating was prepared in a Hull cell and analyzed using scanning electron microscopy and ultra-depth microscopy. The research results indicate that the growth of coating grains is carried out through the mechanism of grain plane step growth and the secondary grain nucleus regrowth mechanism formed by grain boundaries. A new step is formed on the upward protruding vertex position of the octahedron grain and grows downwards along crystal face (111). The growth rate is the highest when a new step begins to form, and the downward growth rate gradually slows down. The growth rate reaches its minimum at the concave grain boundary, and the greater the difference between the maximum and minimum growth rates, the deeper the concave depth of the grain boundary. In addition, the roughness of the substrate surface can promote the coarsening of the coating grains. When the current density is low, the cathodic polarization effect is small, the nucleation rate is low, and the formed grain size is large. The relevant research results on the growth mechanism obtained in this article can provide theoretical guidance for the preparation of copper coatings with different requirements using acidic copper plating process

参考文献/References:

[1].吴群英, 刘智敏, 张翼飞, 等. 浅谈电镀铜工艺及其添加剂的研究进展[J]. 信息记录材料, 2022, 23(4): 62-64.
[2].陈平, 夏良, 贺京峰, 等. 高速电镀铜技术在先进封装金属互连中的研究进展[J]. 微纳电子技术, 2024, 61(7): 60-67.
[3].武锦辉. 高整平酸性光亮镀铜工艺的研究[D]. 哈尔滨: 哈尔滨工业大学, 2023.
[4].傅佳夏. 酸性光亮镀铜工艺研究[D]. 厦门: 厦门大学, 2019.
[5].邹浩斌, 谭超力, 熊伟, 等. 酸性镀铜添加剂开发及应用技术[J]. 电化学, 2022, 28(6): 11-21.
[6].李立清, 王义, 安文娟. 酸性硫酸盐镀铜添加剂研究[J]. 电镀与精饰, 2016, 38(11): 20-23.
[7].王伟, 董彦杰. 酸性镀铜电解液中复合添加剂对电解沉积铜的影响[J]. 安庆师范大学学报(自然科学版), 2019, 25(1): 93-98.
[8].白坤生, 李思周, 陈凯. 酸性镀铜柱状结晶成因及其对PCB性能的影响[J]. 印制电路信息, 2019, 27(1): 31-34.
[9].张志梁, 张迎. 钢铁基体无预镀直接强酸性镀铜工艺[J]. 材料保护, 2021, 54(7): 89-92.
[10].刘励昀. 酸性镀铜高效添加剂的作用机理研究[D]. 安徽: 安庆师范大学, 2021.
[11].武锦辉, 刘鑫宁, 吴波, 等. 酸性镀铜整平剂的应用现状及展望[J]. 电镀与精饰, 2023, 45(4): 77-87.
[12].汪松. 印制板深孔酸性电镀铜添加剂的研究[D]. 哈尔滨: 哈尔滨工业大学, 2011.
[13].Tao Z H, He W, Wang S X, et al. Synergistic effect of different additives on microvia filling in an acidic copper plating solution [J]. Journal of the Electrochemical Society, 2016, 163(8): D379-D384.
[14].Takahashi K M, Gross M E. Transport phenomena that control electroplated copper filling of submicron vias and trenches [J]. Journal of the Electrochemical Society, 1999, 146(12): 4499-4503.
[15].王海振, 胡旭日. 酸性镀铜添加剂对生产锂离子电池用双面光电解铜箔的影响[J]. 电镀与涂饰, 2019, 38(8): 335-337.
[16].Broekmann P, Fluegel A, Emnet C, et al. Classification of suppressor additives based on synergistic and antagonistic ensemble effects [J]. Electrochimica Acta, 2011, 56(13): 4724-4734.
[17].冀林仙, 聂合贤, 苏世栋, 等. 基于多场耦合的旋转圆盘电极法研究酸性镀铜[J]. 电镀与涂饰, 2017, 36(9): 437-444.
[18].Guo J L, Shen S B, Zhao Y S, et al. Growth of single-crystalline particles of metallic copper[J]. Journal of Crystal Growth, 2016, 451: 132-138.
[19].卢光熙, 侯增寿. 金属学教程[M]. 上海: 上海科学技术出版社, 1988: 48-53.
[20].黄元盛, 刘正义, 邱万奇. CVD金刚石薄膜二次形核机制的研究[J]. 材料科学与工程, 2001(1): 50-52.
[21].陆春艳. 无氰Au-Sn共沉积镀液性能与电镀工艺研究[D]. 大连: 大连理工大学, 2020.

相似文献/References:

[1]冀林仙*,王跃峰.多场耦合研究PCB电镀铜[J].电镀与精饰,2022,(11):18.[doi:10.3969/j.issn.1001-3849.2022.11.004]
　JI Linxian*,WANG Yuefeng.Research on Copper Electrodeposition of PCB Based on Multi-Physics Coupling[J].Plating & Finishing,2022,(08):18.[doi:10.3969/j.issn.1001-3849.2022.11.004]
[2]向 静,阮海波*,王 翀,等.添加剂竞争吸附机理研究及通孔电镀应用[J].电镀与精饰,2022,(11):85.[doi:10.3969/j.issn.1001-3849.2022.11.015]
　XIANG Jing,RUAN Haibo*,WANG Chong,et al.Study on Competitive Adsorption Mechanism of Additives and Its Application of Though Holes Plating[J].Plating & Finishing,2022,(08):85.[doi:10.3969/j.issn.1001-3849.2022.11.015]
[3]郑家翀,何 为,陈先明,等.镀镍磷金属片表面处理对电镀铜生长状态影响的研究[J].电镀与精饰,2024,(1):84.[doi:10.3969/j.issn.1001-3849.2024.01.013]
　Zheng Jiachong,He Wei,Chen Xianming,et al.Effect of surface treatment on growth state of electroplating copper for nickel-phosphorus plated metal[J].Plating & Finishing,2024,(08):84.[doi:10.3969/j.issn.1001-3849.2024.01.013]
[4]刘颖*,邢希瑞,田栋,等.酸性一价铜电镀铜的工艺及能效分析[J].电镀与精饰,2024,(4):99.[doi:10.3969/j.issn.1001-3849.2024.04.014]
　Liu Ying*,Xing Xirui,Tian Dong,et al.Energy efficiency analysis of copper electroplating employing acidic cuprous solution[J].Plating & Finishing,2024,(08):99.[doi:10.3969/j.issn.1001-3849.2024.04.014]
[5]陈 洁,宗高亮,代禹涵,等.巯基吡啶异构体对电镀铜填盲孔的影响研究[J].电镀与精饰,2024,(9):1.[doi:doi: 10.3969/j.issn.1001-3849.2024.09.001]
　Chen Jie,Zong Gaoliang,Dai Yuhan,et al.Study on the influence of pyrithione isomers on filling blind holes in electroplated copper[J].Plating & Finishing,2024,(08):1.[doi:doi: 10.3969/j.issn.1001-3849.2024.09.001]
[6]性能影响研究.退火对TSV电镀铜膜层性能影响研究[J].电镀与精饰,2024,(10):42.
　Yu Xianxian*,Jiang Chuang,Zhang Cuicui.Effect of annealing on the properties of electroplated copper in TSV[J].Plating & Finishing,2024,(08):42.
[7]杨彦章,陈志华,钟上彪,等.doi: 10.3969/j.issn.1001-3849.2025.03.0014PEG在电子电镀铜中的作用机制及应用[J].电镀与精饰,2025,(03):96.
　Liu Binyun*,Zhan Dongping.The mechanism and application of PEG in electronic electroplating of copper Yang Yanzhang1,2, Chen Zhihua2, Zhong Shangbiao 2,Ye Shaoming3,[J].Plating & Finishing,2025,(08):96.
[8]方 正,韦相福,杨广柱,等.doi: 10.3969/j.issn.1001-3849.2025.03.015盲孔数值仿真电镀铜研究进展[J].电镀与精饰,2025,(03):106.
　Hu Xiaoqiang,Chen Dedeng.Advances in numerical simulation of copper electroplating in blind vias Fang Zheng1, Wei Xiangfu1,2, Yang Guangzhu1, Mao Xianchang1,3, Wei Song3*,[J].Plating & Finishing,2025,(08):106.
[9]高晓颖,王浩军,周雁文,等.doi: 10.3969/j.issn.1001-3849.2025.04.007HEDP体系无氰镀铜的工艺参数和性能研究[J].电镀与精饰,2025,(04):42.
　Gao Xiaoying,Wang Haojun*,Zhou Yanwen,et al.Research on process parameters and properties of non-cyanide copper plating in HEDP system[J].Plating & Finishing,2025,(08):42.
[10]王丹蕾,宋子豪,聂凯旋,等.doi: 10.3969/j.issn.1001-3849.2026.01.001聚合物整平剂用于浅孔超填充电镀的性能研究[J].电镀与精饰,2026,(01):1.
　WANG Danlei,SONG Zihao,NIE Kaixuan,et al.Performance study on using a polymeric leveler for copper electroplated superfilling of low aspect-ratio microvias[J].Plating & Finishing,2026,(08):1.

更新日期/Last Update: 2025-08-11