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[1]高风仙,徐励娟,张 匀,等. 锗掺杂改性纳米硅提升首次充放电效率 [J].电镀与精饰,2022,(7):50-54.[doi:10.3969/j.issn.1001-3849.2022.07.009]
 GAO Fengxian,XU Lijuan,ZHANG Yun,et al.Germanium-Doped Modified Nano-Silicon Increases the First Coulombic Efficiency[J].Plating & Finishing,2022,(7):50-54.[doi:10.3969/j.issn.1001-3849.2022.07.009]
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锗掺杂改性纳米硅提升首次充放电效率

参考文献/References:



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备注/Memo

收稿日期: 2021-12-04 修回日期: 2022-01-28 作者简介: 高风仙( 1981 - ),女,博士,讲师,主要研究方向无机功能性材料, Email : gaofx1008@163.com * 通信作者: 陈垒( 1984 - ),男,博士,副教授,主要研究方向为锂电池材料, Email : chenlei904@126.com 基金项目: 2021 年度河南省重点研发与推广专项( 212102210215 )、 2021 年度河南工程学院科研培育基金( PYXM202101 )?/html>

更新日期/Last Update: 2022-07-09