Yu Xianxian*,Jiang Chuang,Zhang Cuicui.Effect of annealing on the properties of electroplated copper in TSV[J].Plating & Finishing,2024,(10):42-49.
退火对TSV电镀铜膜层性能影响研究
- Title:
- Effect of annealing on the properties of electroplated copper in TSV
- Keywords:
- through-silicon via (TSV); copper electroplating; additives; annealing; defects; chemico-mechanical polishing; reliability
- 分类号:
- TQ153.1
- 文献标志码:
- A
- 摘要:
- 针对硅通孔（TSV）高深宽比微孔电镀填铜后结晶细小，后续制程经历高温过程可能导致晶界间缺陷的问题，对TSV电镀铜膜层退火后性能变化进行了研究。考察了退火温度和升温速率等退火条件对晶粒晶面取向、晶粒大小、晶界间空洞以及杂质含量等膜层性能的影响，确定了较优的退火工艺参数为升温速率10 ℃/min，400 ℃下保温2 h。结果表明：此较优的高温退火条件下，XRD显示主晶面择优取向为Cu（111）；SIMS分析电镀铜膜层总杂质含量小于100 mg?kg–1；EBSD结果显示电镀铜平均粒径1.9 μm，晶粒长大较充分，满足工业化应用需求，希望对工业化应用提供参考。
- Abstract:
- In order to solve the problem that the small crystal size after copper filling in through-silicon via (TSV) high aspect ratio via microhole electroplating, which may lead to grain boundary defects after high temperature process, the properties of TSV electroplated copper film after annealing were studied. The effects of annealing conditions such as annealing temperature and heating rate on the grain plane orientation, grain size, grain boundary micro void, and impurity content of the film were investigated. The optimal annealing process parameters were determined to be a heating rate of 10 ℃/min and a holding time of 2 h at 400 ℃. The results indicate that under these optimal high-temperature annealing conditions, XRD results show that the preferred orientation of the main crystal plane is Cu (111). SIMS analysis shows that the total impurity content of the electroplated copper film is less than 100 mg?kg–1. EBSD results show that the average particle size of electroplated copper is 1.9 μm. The grain growth is sufficient to meet the needs of industrial applications, which would provide reference for industrial applications
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备注/Memo
TSV电镀过程主要通过添加剂的控制实现超级填充[5-8]，不同类型的添加剂通过浓差极化和电化学吸附等方式起作用，难免会在电镀铜层中产生吸附和掺杂，导致镀层中杂质含量增加，影响到镀层性能[9-12]。另外，TSV实际电镀填充时用的电流密度较小，电镀后的铜晶粒也相对细小，处于热力学不稳定的高自由能状态，有自发恢复到低自由能状态的趋势，需要经过高温退火处理，以消除晶界间残余应力和组织缺陷，让晶粒充分重结晶[10-15]。TSV退火是指将电镀填充后的TSV样品加热到一定温度，保持足够时间，然后以适宜速度冷却。退火时电镀铜会经历回复、重结晶、晶粒长大等过程，退火过程中铜晶粒长大的同时也可能会在晶粒间产生空洞缺陷，故需要选择适当的退火工艺，在保证晶粒重结晶长大的同时，减少空洞的产生[15-21]。