[1]李仪婷,吴正旭,赵 鹏,等.doi: 10.3969/j.issn.1001-3849.2025.09.0174-苯基咪唑基季铵盐整平剂的合成及其在通孔镀铜中的应用[J].电镀与精饰,2025,(09):119-126.
 Li Yiting,Wu Zhengxu,Zhao Peng,et al.The synthesis of 4-phenylimidazolyl quaternary ammonium levelling agent and their application in through-hole plating[J].Plating & Finishing,2025,(09):119-126.
点击复制

doi: 10.3969/j.issn.1001-3849.2025.09.0174-苯基咪唑基季铵盐整平剂的合成及其在通孔镀铜中的应用()

《电镀与精饰》[ISSN:1001-3849/CN:12-1096/TG]

卷:
期数:
2025年09
页码:
119-126
栏目:
出版日期:
2025-09-30

文章信息/Info

Title:
The synthesis of 4-phenylimidazolyl quaternary ammonium levelling agent and their application in through-hole plating
作者:
李仪婷12吴正旭2赵 鹏2南俊民1庄学文2*张小春2*
(1. 华南师范大学 化学学院,广东 广州 510006 ;2. 广东省科学院 化工研究所,广东 广州 510645)
Author(s):
Li Yiting12 Wu Zhengxu2 Zhao Peng2 Nan Junmin1 Zhuang Xuewen2* Zhang Xiaochun2*
(1. School of Chemistry, South China Normal University, Guangzhou 510006, China2. Institute of Chemical Engineering, Guangdong Academy of Sciences, Guangzhou 510645, China)
关键词:
通孔镀整平剂4-苯基咪唑电化学分析TP值
Keywords:
through-hole plating levelling agent 4-phenylimidazole electrochemical analysis TP value
分类号:
TQ153.1
文献标志码:
A
摘要:
针对传统染料类整平剂通孔镀整平能力较差的问题,在酸性催化条件下合成了简单高效的4-苯基咪唑基季铵盐整平剂,并利用核磁氢谱、红外光谱、飞行时间质谱对其结构进行表征。采用电化学循环伏安法、计时电位分析法、哈林槽电镀性能测试、金相切片观察法等一系列手段对其整平性能展开研究。结果表明:4-苯基咪唑基季铵盐整平剂具有极高的整平能力,在温度25 ℃,电流密度1.6 ASD条件下采用哈林槽进行60 min电镀实验测试,仅4 mg/L浓度的整平剂便能够显著提高通孔镀的深镀能力(TP)值至93.33%.
Abstract:
The objective of this study was to address the issue of inadequate levelling capabilities exhibited by conventional dye-based levelling agents in through-hole plating. To this end, a straightforward and effective 4-phenylimidazolyl quaternary ammonium salt levelling agent was synthesized under acid-catalytic conditions. The structural characteristics of this agent were then elucidated through the utilisation of nuclear magnetic resonance (NMR) hydrogen spectroscopy, infrared spectroscopy and time-of-flight mass spectrometry. The levelling performance was investigated through a series of methods, including electrochemical cyclic voltammetry, chrono-potential analysis, Hall bath plating performance testing and metallographic section observation. The findings demonstrate that the 4-phenylimidazole-based levelling agent exhibits an exceptionally high levelling capacity. A mere 4 mg/L concentration of the agent was observed to markedly enhance the throwing power (TP) value of through-hole plating by 93.33% in a Hall bath plating experiment conducted for 60 minutes at a temperature of 25 °C and a current density of 1.6 ASD

参考文献/References:

[1].王旭. 印制电路板通孔电镀整平剂的研究及应用[D]. 重庆: 重庆大学, 2020.
[2].Peng C, Zhai Y, Liu B, et al. Structure performance correlation of N-Heterocyclic oligomer leveler for acid copper plating of advanced interconnects[J]. Molecules, 2023, 28(6): 2783.
[3].Dow W P, Liu C, Evaluating the filling performance of a copper plating formula using a simple galvanostat method[J]. Journal of The Electrochemical Society, 2006, 153: 190.
[4].Zhang J, Chen X, Wang L, et al. Strong convection-dependent adsorption of phenothiazine skeleton levelers and their application in copper electroplating[J]. The Journal of Physical Chemistry C, 2023, 127(3): 1633-1642.
[5].Li Y, Ren P, An M, et al. Investigation of novel leveler Rhodamine B on copper superconformal electrodeposition of microvias by theoretical and experimental studies[J]. Applied Surface Science, 2023, 615: 156266.
[6].Wang C, An M, Zhang J, et al. Prediction of a new leveler (N-butyl-methyl piperidinium bromide) for through-hole electroplating using molecular dynamics simulations[J]. Electrochemistry Communications, 2012, 18: 104-107.
[7].Wu Y, Mao Z, Cai W B, et al. Advances in mechanistic understanding of additives for copper electroplating in high-end electronics manufacture[J]. Scientia Sinica Chimica, 2021, 51(11): 1474-1488.
[8].Hai N T M, Odermatt J, Broekmann P, et al. Potential oscillations in galvanostatic Cu electrodeposition: antagonistic and synergistic effects among SPS, chloride, and suppressor additives[J]. The Journal of Physical Chemistry C, 2012, 116 (12): 6913-6924.
[9].Yang S, Liao H, Lin W, et al. Effects of side-chain polyether additive on zinc electrodeposition from ammoniacal solution[J]. International Journal of Electrochemical Science, 2020, 15(6): 5609-5622.
[10].Lu X, Yao L, Wang Z, et al. A study of bottom-up electroplated copper filling by the potential difference between two rotating speeds of a working electrode[J]. Journal of Electroanalytical Chemistry, 2014, 712: 25-32.
[11].Teng X, Tao Z, Tao X, et al. 1-(4-Hydroxyphenyl)-2H-tetrazole-5-thione as a leveler for acid copper electroplating of microvia[J]. RSC Advances, 2022, 12(25): 16153-16164.
[12].Zhou M, Meng Y, Xu Q, et al. 5-Amino-1,3,4-thiadiazole-2-thiol as a new leveler for blind holes copper electroplating: Theoretical calculation and electrochemical studies[J]. Applied Surface Science, 2022, 606: 154871.
[13].Hai N T M, Huynh T M T, Broekmann P, et al. Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies[J]. Electrochimica Acta, 2011, 56(21): 7361-7370.
[14].Hai N T M, Kr?mer K W, Broekmann P, et al. Beyond interfacial anion/cation pairing: The role of Cu(I) coordination chemistry in additive-controlled copper plating[J]. Electro -chimica Acta, 2012, 83: 367-375.
[15].Hai N T M, Furrer J, Broekmann P, et al. Copolymers of imidazole and 1,4-butandiol diglycidyl ether as an efficient suppressor additive for copper electroplating[J]. Journal of The Electrochemical Society, 2014, 161(9): 381-387.
[16].Dinh V Q, Kondo K, Hirato T, et al. Communication-bottom-up TSV filling using sulfonated diallyl dimethyl ammonium bromide copolymer as a leveler[J]. Journal of The Electrochemical Society, 2019, 166(12): 505-507.
[17].Lee M H, Lee Y, Kim J J, et al. Structural influence of terminal functional groups on TEG-based leveler in microvia filling[J]. Journal of the Electrochemical Society, 2020, 167: 102505.
[18].He X, Tan W, Pan W, et al. Effects of phenyl-modified nitrogen-containing levelers on copper electroplating of blind via with high aspect ratio[J]. Electroplating & Finishing, 2022, 41(17): 1237-1244.
[19].Zhang Y, An M, Zhang J, et al. Electrochemical behavior of through-hole electrodeposition inhibitor EO-PO under periodic pulse reverse[J]. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2022, 655: 130238.
[20].Zheng L, He W, Zhou J, et al. Investigation of poly (1-vinyl imidazole co 1, 4-butanediol diglycidyl ether) as a leveler for copper electroplating of through-hole[J]. Electrochimica Acta, 2018, 283: 560-567.
[21].Yuan B, Chen X, Wang L, et al. Unveiling the potential and mechanisms of 3,3’-bicarbazole-based quaternary ammonium salts as levelers[J]. Electrochimica Acta, 2023, 471: 143345.

相似文献/References:

[1]王 旭*,李 振,冯龙龙,等.一种新型小分子电镀铜整平剂的模拟研究[J].电镀与精饰,2023,(1):80.[doi:10.3969/j.issn.1001-3849.2023.01.012]
 Wang Xu*,Li Zhen,Feng Longlong,et al.Simulation study on a novel small molecular leveler for copper electroplating[J].Plating & Finishing,2023,(09):80.[doi:10.3969/j.issn.1001-3849.2023.01.012]
[2]武锦辉,刘鑫宁,吴波,等.酸性镀铜整平剂的应用现状及展望[J].电镀与精饰,2023,(4):77.[doi:10.3969/j.issn.1001-3849.2023.04.013]
 Wu Jinhui,Liu Xinning,Wu Bo,et al.Application status and prospect of acidic copper plating leveler[J].Plating & Finishing,2023,(09):77.[doi:10.3969/j.issn.1001-3849.2023.04.013]
[3]许昕莹,肖树城,张路路,等.新型整平剂对电镀铜填通孔的影响及机制探究[J].电镀与精饰,2024,(5):92.[doi:10.3969/j.issn.1001-3849.2024.05.013]
 Xu Xinying,Xiao Shucheng,Zhang Lulu,et al.Influence and mechanism of new leveler on through hole filling by copper electroplating[J].Plating & Finishing,2024,(09):92.[doi:10.3969/j.issn.1001-3849.2024.05.013]
[4]陈 洁,宗高亮,代禹涵,等.巯基吡啶异构体对电镀铜填盲孔的影响研究[J].电镀与精饰,2024,(9):1.[doi:doi: 10.3969/j.issn.1001-3849.2024.09.001]
 Chen Jie,Zong Gaoliang,Dai Yuhan,et al.Study on the influence of pyrithione isomers on filling blind holes in electroplated copper[J].Plating & Finishing,2024,(09):1.[doi:doi: 10.3969/j.issn.1001-3849.2024.09.001]

更新日期/Last Update: 2025-09-11