PDF下载 分享
[1]武锦辉,刘鑫宁,吴波,等.酸性镀铜整平剂的应用现状及展望[J].电镀与精饰,2023,(4):77-87.[doi:10.3969/j.issn.1001-3849.2023.04.013]
　Wu Jinhui,Liu Xinning,Wu Bo,et al.Application status and prospect of acidic copper plating leveler[J].Plating & Finishing,2023,(4):77-87.[doi:10.3969/j.issn.1001-3849.2023.04.013]
点击复制

酸性镀铜整平剂的应用现状及展望

《电镀与精饰》[ISSN:1001-3849/CN:12-1096/TG] 卷: 期数: 2023年4 页码: 77-87 栏目: 出版日期: 2023-04-15
Title:
Application status and prospect of acidic copper plating leveler
作者:
（1.哈尔滨工业大学 化工与化学学院，黑龙江 哈尔滨 150001；2.常州信升汽车部件有限公司，江苏 常州 213127）
Author(s):
（1.School of Chemistry and Chemical Engineering， Harbin Institute of Technology， Harbin 150001， China； 2.Changzhou Xinsheng Automotive Component Co.，Ltd.， Changzhou 213127， China）
关键词:
酸性镀铜; 整平剂; 染料; 非染料; 季铵盐; 无机化合物
Keywords:
acid copper plating ;  leveler ;  dyes ;  non-dyes ;  quaternary ammonium salts ;  inorganic compounds
分类号:
TQ153.14
DOI:
10.3969/j.issn.1001-3849.2023.04.013
文献标志码:
A
摘要:
随着制造技术向微小化、复杂化、高精度化方向发展，电镀铜镀液中添加剂选择和使用变得更加重要。整平剂作为其中的关键组分，对于实现高平整性镀层、通孔盲孔填充等至关重要。本文简要综述了酸性硫酸盐镀铜整平剂的作用原理，并根据特征基团的不同，对目前研究开发的整平剂进行了分类与总结。最后介绍了整平剂目前的应用现状，并对添加剂未来研究方向和发展进行了展望。
Abstract:
： With the development of manufacturing technology towards miniaturization ， complexity ， and high precision ， the selection and use of additives in electroplating copper plating solutions become more important. As a key component ， the leveler is very important for achieving high-level plating ， through hole filling and blind hole filling ， etc. This paper briefly reviews the action mechanism of acidic sulfate copper plating leveler. And according to the different characteristic groups ， the leveling agents researched and developed at present are classified and summarized. Finally ， the current application status of leveling agents is introduced ， and the future research direction and development of additives are prospected.

参考文献/References:



[1] Tomie M, Akita T, Irita M, et al. Transitional additive adsorption with co-addition of suppressor and leveler for copper TSV filling[J]. Journal of the Electrochemical Society, 2020, 167(8): 82513.

[2] Kim S K, Josell D, Moffat T P. Electrodeposition of Cu in the PEI-PEG-Cl-SPS additive system: Reduction of overfill bump formation during superfilling[J]. Journal of the Electrochemical Society, 2006, 153(9): C616.

[3] Kim S K, Josell D, Moffat T P. Cationic surfactants for the control of overfill bumps in Cu superfilling[J]. Journal of the Electrochemical Society, 2006, 153(12): C826-C833.

[4] Dow W P, Huang H S, Yen M Y, et al. Influence of convection-dependent adsorption of additives on microvia filling by copper electroplating[J]. Journal of the Electrochemical Society, 2005, 152(6): C425-C434.

[5] Lai Z, Wang S, Wang C, et al. Computational analysis and experimental evidence of two typical levelers for acid copper electroplating[J]. Electrochimica Acta, 2018, 273: 318-326.

[6] Li Y B, Wang W, Li Y L. Adsorption behavior and related mechanism of janus green B during copper via-filling process[J]. Journal of the Electrochemical Society, 2009, 156(4): D119.

[7] Dow W P, Li C C, Su Y C, et al. Microvia filling by copper electroplating using diazine black as a leveler[J]. Electrochimica Acta, 2009, 54(24): 5894-5901.

[8] Dow W P, Li C C, Lin M W, et al. Copper fill of microvia using a thiol-modified Cu seed layer and various levelers[J]. Journal of the Electrochemical Society, 2009, 156(8): D314.

[9] Zhu H P, Zhu Q S, Zhang X, et al. Microvia filling by copper electroplating using a modified safranine T as a leveler[J]. Journal of the Electrochemical Society, 2017, 164(9): D645-D651.

[10] Manu R, Jayakrishnan S. Effect of organic dye on copper metallization of high aspect ratio through hole for interconnect application[J]. Materials Chemistry and Physics, 2012, 135(2-3): 425-432.

[11] Dow W P, Liu C W. Evaluating the filling performance of a copper plating formula using a simple galvanostat method[J]. Journal of the Electrochemical Society, 2006, 153(3): C190-C194.

[12] Dow W P, Yen M Y, Liu C W, et al. Enhancement of filling performance of a copper plating formula at low chloride concentration[J]. Electrochimica Acta, 2008, 53(10): 3610-3619.

[13] Li J, Xu J, Wang X, et al. Novel 2,5-bis(6-(trimethylamonium)hexyl)-3,6-diaryl-1,4-diketopyrrolo[3,4-c]pyrrole pigments as levelers for efficient electroplating applications[J]. Dyes and Pigments, 2021, 186: 109064.

[14] Xu J, Chen B, Lv J, et al. Aryl modification of diketopyrrolopyrrole-based quaternary ammonium salts and their applications in copper electrodeposition[J]. Dyes and Pigments, 2019, 170: 107559.

[15] Wang K, Feng J, Xu J, et al. Engineering aromatic heterocycle strategy: Improving copper electrodeposition performance via tuning the bandgap of diketopyrrolopyrrole-based leveler[J]. Tetrahedron, 2020, 76(5): 130882.

[16] Li J, Xu J, Wang X, et al. Diketopyrrolopyrrole-based supramolecular nano-leveler for the enhancement of conformal copper electrodeposition[J]. Applied Surface Science, 2021, 569: 150982.

[17] Wang Z Y, Jin L, Li G, et al. Electrochemical and in situ FTIR spectroscopic studies of gentian violet as a novel leveler in through-holes metallization for printed circuit board applications[J]. Electrochimica Acta, 2022, 410: 140018.

[18] Xu J Y, Wang S X, Su Y Z, et al. Investigation of through-hole copper electroplating with methyl orange as a special leveler[J]. Journal of Electrochemistry, 2022, 28(7): 2213033.

[19] Wang X, Wang K, Xu J, et al. Quinacridone skeleton as a promising efficient leveler for smooth and conformal copper electrodeposition[J]. Dyes and Pigments, 2020, 181: 108594.

[20] Dow W P, Chen H H, Yen M Y, et al. Through-hole filling by copper electroplating[J]. Journal of The Electrochemical Society, 2008, 155(12): D750.

[21] Wang C, Zhang J, Yang P, et al. Through-hole copper electroplating using nitrotetrazolium blue chloride as a leveler[J]. Journal of the Electrochemical Society, 2013, 160(3): D85-D88.

[22] Tsai H C, Chang Y C, Wu P W. Rapid galvanostatic determination on levelers for superfilling in cu electroplating[J]. Electrochemical and Solid-State Letters, 2010, 13(2): D7.

[23] Xu Y, Zhang S, Li W, et al. Experimental and theoretical investigations of some pyrazolo-pyrimidine derivatives as corrosion inhibitors on copper in sulfuric acid solution[J]. Applied Surface Science, 2018, 459: 612-620.

[24] Liao C, Zhang S, Chen S, et al. The effect of tricyclazole as a novel leveler for filling electroplated copper microvias[J]. Journal of Electroanalytical Chemistry, 2018, 827: 151-159.

[25] Leung T Y B, Kang M, Corry B F, et al. Benzotriazole as an additive for copper electrodeposition: Influence of triazole ring substitution[J]. Journal of the Electrochemical Society, 2000, 147(9): 3326-3337.

[26] Chang C, Lu X, Lei Z, et al. 2-Mercaptopyridine as a new leveler for bottom-up filling of micro-vias in copper electroplating[J]. Electrochimica Acta, 2016, 208: 33-38.

[27] Ren S, Lei Z, Wang Z. Investigation of nitrogen heterocyclic compounds as levelers for electroplating Cu filling by electrochemical method and quantum chemical calculation[J]. Journal of the Electrochemical Society, 2015, 162(10): D509-D514.

[28] Wang X, Zhang S, Chen S, et al. Effects of 2,2-dithiodipyridine as a leveler for through-holes filling by copper electroplating[J]. Journal of the Electrochemical Society, 2019, 166(13): D660-D668.

[29] Lei Z, Chen L, Wang W, et al. Tetrazole derived levelers for filling electroplated Cu microvias: Electrochemical behaviors and quantum calculations[J]. Electrochimica Acta, 2015, 178: 546-554.

[30] Zhou M, Meng Y, Ling J, et al. 5-Amino-1,3,4-thiadiazole-2-thiol as a new leveler for blind holes copper electroplating: Theoretical calculation and electrochemical studies[J]. Applied Surface Science, 2022, 606: 154871.

[31] Mészáros R, Thompson L, Bos M, et al. Adsorption and electrokinetic properties of polyethylenimine on silica surfaces[J]. Langmuir, 2002, 18(16): 6164-6169.

[32] Balzer C, Jiang J, Marson R L, et al. Nonelectrostatic adsorption of polyelectrolytes and mediated interactions between solid surfaces[J]. Langmuir, 2021, 37(18): 5483-5493.

[33] Hayase M, Nagao M. Copper deep via filling with selective accelerator deactivation by polyethyleneimine[J]. Journal of the Electrochemical Society, 2013, 160(12): D3216-D3220.

[34] Reid J D, Zhou J. Impact of leveler molecular weight and concentration on damascene copper electroplating[J]. ECS Transactions, 2007, 2(6): 77-92.

[35] Dinh V Q, Kondo K, Hoang V H, et al. Communication-bottom-up TSV filling using sulfonated diallyl dimethyl ammonium bromide copolymer as a leveler[J]. Journal of the Electrochemical Society, 2019, 166(12): D505-D507.

[36] Hai N T M, Furrer J, Barletta E, et al. Copolymers of imidazole and 1,4-butandiol diglycidyl ether as an efficient suppressor additive for copper electroplating[J]. Journal of the Electrochemical Society, 2014, 161(9): D381-D387.

[37] Simona F, Hai N T M, Broekmann P, et al. From structure to function: Characterization of Cu(I) adducts in leveler additives by DFT calculations[J]. The Journal of Physical Chemistry Letters, 2011, 2(24): 3081-3084.

[38] Atkin R, Craig V S J, Wanless E J, et al. Mechanism of cationic surfactant adsorption at the solid-aqueous interface[J]. Advances in Colloid and Interface Science, 2003, 103(3): 219-304.

[39] Wang A, Chen B, Fang L, et al. Influence of branched quaternary ammonium surfactant molecules as levelers for copper electroplating from acidic sulfate bath[J]. Electrochimica Acta, 2013, 108: 698-706.

[40] Meng Y, Zhou M, Huang W, et al. Benzyl-containing quaternary ammonium salt as a new leveler for microvia copper electroplating[J]. Electrochimica Acta, 2022, 429: 141013.

[41] Lee M H, Lee Y, Kim J A, et al. Quaternary ammonium-based levelers for high-speed microvia filling via Cu electrodeposition[J]. Electrochimica Acta, 2022, 419: 140389.

[42] Lv J, Zhao X, Jie X, et al. Fatty acid quaternary ammonium surfactants based on renewable resources as a leveler for copper electroplating[J]. ChemElectroChem, 2019, 6(13): 3254-3263.

[43] Kim M J, Kim H C, Kim J J. The Influences of iodide ion on Cu electrodeposition and TSV filling[J]. Journal of the Electrochemical Society, 2016, 163(8): D434-D441.

[44] Sung M, Yoon Y, Hong J, et al. Bromide ion as a leveler for high-speed TSV filling[J]. Journal of the Electrochemical Society, 2019, 166(13): D546-D550.

[45] Lee M H, Kim M J, Kim J J. Competitive adsorption between bromide ions and bis(3-sulfopropyl)-disulfide for Cu microvia filling[J]. Electrochimica Acta, 2021, 370: 137707.

[46] Sone T, Wachi H K. Kupferplattierungsverfahren: Germany, DE60022480T2[P]. 2006-03-16.

相似文献/References:

[1]王 旭*,李 振,冯龙龙,等.一种新型小分子电镀铜整平剂的模拟研究[J].电镀与精饰,2023,(1):80.[doi:10.3969/j.issn.1001-3849.2023.01.012]
　Wang Xu*,Li Zhen,Feng Longlong,et al.Simulation study on a novel small molecular leveler for copper electroplating[J].Plating & Finishing,2023,(4):80.[doi:10.3969/j.issn.1001-3849.2023.01.012]
[2]许昕莹,肖树城,张路路,等.新型整平剂对电镀铜填通孔的影响及机制探究[J].电镀与精饰,2024,(5):92.[doi:10.3969/j.issn.1001-3849.2024.05.013]
　Xu Xinying,Xiao Shucheng,Zhang Lulu,et al.Influence and mechanism of new leveler on through hole filling by copper electroplating[J].Plating & Finishing,2024,(4):92.[doi:10.3969/j.issn.1001-3849.2024.05.013]
[3]陈 洁,宗高亮,代禹涵,等.巯基吡啶异构体对电镀铜填盲孔的影响研究[J].电镀与精饰,2024,(9):1.[doi:doi: 10.3969/j.issn.1001-3849.2024.09.001]
　Chen Jie,Zong Gaoliang,Dai Yuhan,et al.Study on the influence of pyrithione isomers on filling blind holes in electroplated copper[J].Plating & Finishing,2024,(4):1.[doi:doi: 10.3969/j.issn.1001-3849.2024.09.001]

备注/Memo

收稿日期： 2022-12-17 修回日期： 2023-02-09 作者简介： 武锦辉（ 1998 —），男，硕士研究生， email ： 21s125204@stu.hit.edu.cn * 通信作者： 黎德育， email ： lideyu@hit.edu.cn?/html>

更新日期/Last Update: 2023-04-14