ZHANG Jin*,LIU Yuling,YAN Chenqi.Effect of Oxidant on Chemical Mechanical Polishing of Aluminium Grids[J].Plating & Finishing,2020,(1):18-21.[doi:10.3969/j.issn.1001-3849.2020.01.004]
氧化剂对铝栅化学机械抛光的影响
- Title:
- Effect of Oxidant on Chemical Mechanical Polishing of Aluminium Grids
- Keywords:
- CMP; removal rate; aluminum grids; surface roughness; oxidant
- 文献标志码:
- A
- 摘要:
- 氧化剂作为抛光液的组成成分，在铝栅化学机械抛光（CMP）中起到直接影响去除速率和表面粗糙度的重要作用。本文研究了氧化剂浓度对去除速率、表面粗糙度、电化学特性的影响，采用原子力显微镜和CHI600E电化学工作站，分别测量了材料的表面粗糙度和腐蚀电位。结果表明，去除速率与氧化剂浓度有关，表面粗糙度与通过氧化反应生成的氧化层有关，当氧化剂达到15 mL/L时，去除速率可达到1700 nm/min，表面粗糙度为4.6 nm。
- Abstract:
- As a component of polishing fluid, oxidant plays an important role in the chemical mechanical polishing (CMP) of aluminum grids, which directly affects the removal rate and surface roughness. In this paper, effects of oxidant concentration on the removal rate, surface roughness and electrochemical characteristics were studied. Surface roughness and corrosion potential of materials were measured by atomic force microscopy and CHI600E electrochemical workstation. The results showed that the removal rate was related to the oxidant concentration, while the surface roughness was related to the oxidation layer generated by the oxidation reaction. When the oxidant concentration reached 15 mL/L, the removal rate could reach 1700 nm/min and the surface roughness was 4.6 nm.
参考文献/References:
[1] Hsien Y H, Hsu H K, Tsai T C, et al. Process development of high-k metal gate aluminum CMP at 28 nm technology node[J]. Microelectronic Engineering, 2012, 92: 19-23.
[2] 张金, 刘玉岭, 闫辰奇, 等. 磨料粒径对铝栅CMP去除速率和粗糙度的影响[J]. 电镀与精饰, 2017, 39(1): 29-31.
[3] Zhang J, Liu Y L, Yan C Q, et al. Investigation on chemical mechanical planarization performance of the replacement metal gate aluminum polishing slurry[J]. ECS Journal of Solid State Science and Technology, 2016, 5(7): 446-450.
[4] Xu Q Z, Chen L. A material removal rate model for aluminum gate chemical mechanical planarization[J]. ECS Journal of Solid State Science and Technology, 2015, 4(3): 101-107.
[5] 陈晓春. 化学机械抛光试验及其材料去除机理的研究[D]. 无锡: 江南大学, 2014.
[6] 冯翠月, 张文倩, 刘玉岭. 碱性条件下CMP参数对铝栅表面粗糙度的影响[J]. 微纳电子技术, 2016, 53(1): 53-58.
[7] Hsu H K, Tsai T C, Hsu C W, et al. Defect reduction of replacement metal gate aluminum chemical mechanical planarization at 28 nm technology node[J]. Microelectronic Engineering, 2013, 112: 121-125.
[8] 王辰伟. GLSI多层铜布线阻挡层CMP材料与工艺的研究[D]. 天津: 河北工业大学, 2013.
[9] Kanki T, Kimura T, Nakamura T. Chemical and mechanical properties of Cu surface reaction layers in Cu-CMP to improve planarization[J]. ECS Journal of Solid State Science and Technology, 2013, 2(9): 375-379.
备注/Memo
收稿日期： 2019-07-18；修回日期： 2019-08-14
通信作者： 张金， email: zhangjin19860406@163.com
基金项目： 国家中长期科技发展规划02科技重大专项资助项目（2009ZX02308）；唐山市科技计划项目（17110225a）；唐山学院博士创新基金资助项目（tsxybc201805）；唐山师范学院博士基金项目（2018A02）；唐山市科技计划应用基础研究项目（18130231a）。