Li Zhaoying *.Effect of power on electrical properties of vanadium oxide thin films prepared by direct current magnetron sputtering[J].Plating & Finishing,2023,(4):45-50.[doi:10.3969/j.issn.1001-3849.2023.04.008]
功率对直流磁控溅射氧化钒薄膜电学性能的影响
- Title:
- Effect of power on electrical properties of vanadium oxide thin films prepared by direct current magnetron sputtering
- Keywords:
- vanadium oxide thin film ; power ; direct current magnetron sputtering ; temperature coefficient of resistance
- 分类号:
- TN305.92
- 文献标志码:
- A
- 摘要:
- 采用直流磁控溅射方法在长有 300 nm 厚的 Si 3 N 4 薄膜的 Si ( 100 )晶圆上制备了氧化钒薄膜,利用 X 射线衍射仪( XRD )、 X 射线光电子能谱( XPS )、原子力显微镜( AFM )和探针法分析了不同功率对薄膜结晶结构、成分、表面形貌和电学性能的影响。结果表明:不同功率沉积的氧化钒薄膜均为非晶结构,薄膜主要成分为 VO 2 和 V 2 O 5 ;随着功率的提高,薄膜的平均粗糙度降低, V 2 O 5 的含量升高,进而导致电阻温度系数绝对值也随之增大。
- Abstract:
- : Vanadium oxide thin films were prepared on Si ( 100 ) wafers with 300 nm thick Si 3 N 4 films by direct current magnetron sputtering. The effects of different power on the crystal structure , composition , surface morphology and electrical properties of the films were analyzed by X-ray diffraction ( XRD ), X-ray photoelectron spectroscopy ( XPS ), atomic force microscopy ( AFM ) and probe method. The results show that the vanadium oxide films deposited at different power are amorphous , and the main components of the films are VO 2 and V 2 O 5 . With the increase of power , the average roughness of the film decreases , and the content of V 2 O 5 increases , which leads to the increase of the absolute value of the temperature coefficient of resistance.
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相似文献/References:
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备注/Memo
收稿日期: 2022-11-15 修回日期: 2023-01-16 * 通信作者: 李兆营( 1989 —),男,硕士,工程师, email : lzy11189@126.com?/html>